Abstract
In this work, we present a drain current compact model for nanoscale triple gate FinFETs satisfying continuity and source/drain symmetry. This is achieved by upgrading key equations of our original compact model. The formulated model is compact, valid in all regions of operation and its accuracy is validated through comparison with simulation data of nanoscale triple-gate transistor. The symmetry conditions are investigated and validated by performing the Gummel Symmetry Test.
