Abstract
Through Silicon Vias (TSVs) defects are a serious concern for the reliability and the yield of three dimensional integrated circuits (3D ICs). In this paper, a post-bond, parallel testing and diagnosis scheme is proposed, for the detection and location of resistive bridging defects between TSVs. This scheme is based on an all-digital built-in testing circuitry. Monte-Carlo analysis results, using the statistical models of the 90nm technology of UMC, are presented to validate the new testing approach. In addition, comparisons with the most advanced testing technique in the literature, for TSV bridging defects, accentuated that the proposed scheme is more efficient in terms of defect detection effectiveness, robustness, tolerance, cost and design for testability effort.